ty p-channel mosfet RAL025P01 ? structure ? dimensions (unit : mm) ? features 1) low on-resistance. 2) small high power package. 3) low voltage drive.(1.5v) ? application switching ? packaging specifications ? inner circuit package taping code tcr basic ordering unit (pieces) 3000 RAL025P01 ? ? absolute maximum ratings (ta = 25 ? c) symbol limits unit drain-source voltage v dss ? 12 v gate-source voltage v gss 0 to ? 8 v continuous i d ? 2.5 a pulsed i dp ? 6a continuous i s ? 0.8 a pulsed i sp ? 6a power dissipation p d 1w channel temperature tch 150 ? c range of storage temperature tstg ? 55 to ? 150 ? c *1 pw ? 10 ? s, duty cycle ? 1% *2 mounted on a ceramic board. ? thermal resistance symbol limits unit channel to ambient rth (ch-a) 125 ? c / w *mounted on a ceramic board. parameter type source current (body diode) drain current parameter tumt6 0.2max. * *2 *1 *1 *2 *1 abbreviated symbol : sd (1) drain (2) drain (3) gate (4) source (5) drain (6) drain ? 1 esd protection diode ? 2 body diode ? 1 (4) (1) (2) ? 2 (6) (5) (3) product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
? electrical characteristics (ta = 25 ? c) symbol min. typ. max. unit gate-source leakage i gss -- ? 10 ? av gs = ? 8v, v ds =0v drain-source breakdown voltage v (br)dss ? 12 - - v i d = ? 1ma, v gs =0v zero gate voltage drain current i dss -- ? 10 ? av ds = ? 12v, v gs =0v gate threshold voltage v gs (th) ? 0.3 - ? 1.0 v v ds = ? 6v, i d = ? 1ma -4462 i d = ? 2.5a, v gs = ? 4.5v -5577 i d = ? 1.2a, v gs = ? 2.5v - 75 110 i d = ? 1.2a, v gs = ? 1.8v - 90 180 i d = ? 0.5a, v gs = ? 1.5v forward transfer admittance l y fs l 3.5 - - s i d = ? 2.5a, v ds = ? 6v input capacitance c iss - 2000 - pf v ds = ? 6v output capacitance c oss - 130 - pf v gs =0v reverse transfer capacitance c rss - 120 - pf f=1mhz turn-on delay time t d(on) - 11 - ns i d = ? 1.2a, v dd ? 6v rise time t r - 40 - ns v gs = ? 4.5v turn-off delay time t d(off) - 160 - ns r l =5 ? fall time t f - 60 - ns r g =10 ? total gate charge q g - 16 - nc i d = ? 2.5a gate-source charge q gs - 2.4 - nc v dd ? 6v gate-drain charge q gd - 2.2 - nc v gs = ? 4.5v *pulsed ? body diode characteristics (source-drain) (ta = 25 ? c) symbol min. typ. max. unit forward voltage v sd -- ? 1.2 v i s = ? 2.5a, v gs =0v *pulsed conditions conditions m ? parameter parameter static drain-source on-state resistance r ds (on) * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * ******** * * * RAL025P01 product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
|
